World’s Smallest Transistor Created Using Single Atom
worlds smallest transistor with only one atom
post by : pratik gohel
A 3D perspective scanning tunnelling microscope (STM) image of a hydrogenated silicon surface.
Scientists have created what they claim is the world’s smallest
transistor, using a single phosphorus atom. An international team at the
University of New South Wales, Purdue University and the University of
Melbourne, has described the smallest transistor ever built in the Nature Nanotechnology journal.
Michelle Simmons, who led the team, says the development is less about improving current technology than building future technology.
“This is a beautiful demonstration of controlling matter at the
atomic scale to make a real device. Fifty years ago when the first
transistor was developed, no one could have predicted the role computers
would play in our society today.
“As we transition to atomic-scale devices, we are now entering a new paradigm where quantum
mechanics promises a similar technological disruption. It is the
promise of this future technology that makes this present development so
exciting,” Simmons said.
A single phosphorus atom is just 0.1 nano meters across, which would
significantly reduce the size of processors made using this technique,
although it may be many years before single-atom processors actually are
manufactured.
However, the single-atom transistor does have one serious limitation —
it must be kept very cold, at least as cold as liquid nitrogen, or
minus 196 Celsius.
“The atom sits in a well or channel and for it to operate as a
transistor the electrons must stay in that channel. At higher
temperatures, the electrons move more and go outside of the channel. For
this atom to act like a metal you have to contain the electrons to the
channel.
“If someone develops a technique to contain the electrons, this
technique could be used to build a computer that would work at room
temperature. But this is a fundamental question for this technology,” Gerhard Klimeck, a team member, said in a release by Purdue University.
Single-atom transistor based on deterministic positioning of a phosphorus atom in epitaxial silicon.
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